HN2D01FU 2001-02-08 1/3 toshiba diode silicon epitaxial planar type HN2D01FU ultra high speed switching application HN2D01FU is composed of 3 independent diodes. low forward voltage : v f (3) = 0.98v (typ.) fast reverse recovery time : t rr = 1.6ns (typ.) small total capacitance : c t = 0.5pf (typ.) pin assignment (top view) marking maximum ratings (ta = 25 c) characteristic symbol rating unit maximum (peak) reverse voltage v rm 85 v reverse voltage v r 80 v maximum (peak) forward current i fm 240 * ma average forward current i o 80 * ma surge current (10ms) i fsm 1 * a power dissipation p 200 mw junction temperature t j 125 c storage temperature t stg ? 55 125 c * : this is maximum rating of single diode (q1 or q2 or q3). in the case of using 2 ro 3 diodes, the maximum ratings per diodes is 75 of the single diode one. jedec D eiaj D toshiba 1-2t1c weight: 6.2mg unit in mm toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in ge neral can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibi lity of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, a nd to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury o r damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handlin g guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfun ction o r failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energ y control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion cont rol instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this docume n t shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assume d b y toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from i ts use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation o r others. the information contained herein is subject to change without notice. 000707 eaa1
HN2D01FU 2001-02-08 2/3 electrical characteristics (q1 q2 q3 common, ta = 25 c) characteristic symbol test circuit test condition min typ. max unit v f (1) D i f = 1ma D 0.62 D v f (2) D i f = 10ma D 0.75 D forward voltage v f (3) D i f = 100ma D 0.98 1.20 v i r (1) D v r = 30v D D 0.1 reverse current i r (2) D v r = 80v D D 0.5 a total capacitance c t D v r = 0, f = 1mh z D 0.5 3.0 pf reverse recovery time t rr D i f = 10ma (fig.1) D 1.6 4.0 ns fig.1 reverse recovery time (t rr ) test circuit
HN2D01FU 2001-02-08 3/3 q1, q2, q3 common q1, q2, q3 common q1, q2, q3 common
|
